Справочник MOSFET. FDMA7628

 

FDMA7628 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMA7628
   Маркировка: 104
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.5 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
   Тип корпуса: MICROFET2X2

 Аналог (замена) для FDMA7628

 

 

FDMA7628 Datasheet (PDF)

 ..1. Size:242K  fairchild semi
 fdma7628.pdf

FDMA7628 FDMA7628

May 2012FDMA7628Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia

 ..2. Size:2886K  cn vbsemi
 fdma7628.pdf

FDMA7628 FDMA7628

FDMA7628www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L-

 8.1. Size:216K  fairchild semi
 fdma7670.pdf

FDMA7628 FDMA7628

January 2012FDMA7670Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 mFeatures General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo

 8.2. Size:228K  fairchild semi
 fdma7672.pdf

FDMA7628 FDMA7628

April 2012FDMA7672Single N-Channel PowerTrench MOSFET 30 V, 9 A, 21 mFeatures General Description Max rDS(on) = 21 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 32 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low Pr

 8.3. Size:224K  fairchild semi
 fdma7630.pdf

FDMA7628 FDMA7628

September 2010FDMA7630Single N-Channel PowerTrench MOSFET 30 V, 11 A, 13 mFeatures General Description Max rDS(on) = 13 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 20 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching

 8.4. Size:230K  fairchild semi
 fdma7632.pdf

FDMA7628 FDMA7628

August 2010FDMA7632Single N-Channel PowerTrench MOSFET 30 V, 9 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low P

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