FDMA7628 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMA7628
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
Тип корпуса: MICROFET2X2
- подбор MOSFET транзистора по параметрам
FDMA7628 Datasheet (PDF)
fdma7628.pdf

May 2012FDMA7628Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.4 A, 14.5 mFeatures General Description Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 9.4 AThis Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 18.2 m at VGS = 2.5 V, ID = 8.3 Aoptimize the rDS(ON) @ VGS = 1.5 V on specia
fdma7628.pdf

FDMA7628www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L-
fdma7670.pdf

January 2012FDMA7670Single N-Channel PowerTrench MOSFET 30 V, 11 A, 15 mFeatures General Description Max rDS(on) = 15 m at VGS = 10 V, ID = 11 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 22 m at VGS = 4.5 V, ID = 9 A low rDS(on) and gate charge provide excellent switching Lo
fdma7672.pdf

April 2012FDMA7672Single N-Channel PowerTrench MOSFET 30 V, 9 A, 21 mFeatures General Description Max rDS(on) = 21 m at VGS = 10 V, ID = 9 AThis device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 32 m at VGS = 4.5 V, ID = 7 A low rDS(on) and gate charge provide excellent switching Low Pr
Другие MOSFET... FDPC8011S , HUF75639SF085A , FDMS3620S , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ , IRFZ48N , FDMC86248 , FDPC8013S , FDP039N08B , FDME820NZT , FDS86540 , FDPF18N20FTG , HUF76633P3F085 , FDMS030N06B .
History: SI9945BDY | NVTFS002N04C
History: SI9945BDY | NVTFS002N04C



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