FDPC8013S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDPC8013S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 333 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
Тип корпуса: PQFN3.3X3.3
- подбор MOSFET транзистора по параметрам
FDPC8013S Datasheet (PDF)
fdpc8013s.pdf

October 2014FDPC8013SPowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 9.6 m at VGS = 4.5 V, ID = 10 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. T
fdpc8013s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpc8016s.pdf

October 2013FDPC8016SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS
fdpc8014s.pdf

April 2014FDPC8014SPowerTrench Power Clip25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
History: MCH3484 | DMN30H4D0L



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc1364 replacement | 2sd665 | 7506 mosfet datasheet | 2sb1186a | a1695 datasheet | 3415 transistor | 072ne6pt | 2sd388