FDMS030N06B - описание и поиск аналогов

November 2013 FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 m Features Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance wh

January 2015 FDMS0306AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

August 2010 FDMS0308CS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

October 2014 FDMS0308AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

January 2015 FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 m Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

October 2014 FDMS0300S N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

October 2014 FDMS0302S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

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