FDMS86150
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMS86150
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.7
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 16
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 44
nC
trⓘ -
Время нарастания: 8.3
ns
Cossⓘ - Выходная емкость: 696
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00485
Ohm
Тип корпуса: PQFN8L
Аналог (замена) для FDMS86150
FDMS86150
Datasheet (PDF)
..1. Size:298K fairchild semi
fdms86150.pdf 
November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the
..2. Size:353K onsemi
fdms86150.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:358K 1
fdms86150et100.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.2. Size:316K fairchild semi
fdms86150et100.pdf 
January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p
0.3. Size:268K fairchild semi
fdms86150a.pdf 
December 2014FDMS86150AN-Channel Shielded Gate PowerTrench MOSFET100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the
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