FCP260N60E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FCP260N60E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 1330 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
FCP260N60E Datasheet (PDF)
fcp260n60e fcpf260n60e.pdf

March 2014FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 15 A, 260 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 220 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge
fcp260n60e fcpf260n60e.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp260n65s3.pdf

FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored
fcp260n65s3.pdf

FCP260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored
Другие MOSFET... FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , FDMQ86530L , FDB035AN06F085 , IRF540N , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 .
History: NVTFS002N04C | SI9945BDY
History: NVTFS002N04C | SI9945BDY



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