FCP600N60Z - описание и поиск аналогов

 

FCP600N60Z. Аналоги и основные параметры

Наименование производителя: FCP600N60Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 89 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 630 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220

Аналог (замена) для FCP600N60Z

- подборⓘ MOSFET транзистора по параметрам

 

FCP600N60Z даташит

 ..1. Size:629K  fairchild semi
fcp600n60z fcpf600n60z.pdfpdf_icon

FCP600N60Z

November 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 ..2. Size:807K  onsemi
fcp600n60z fcpf600n60z.pdfpdf_icon

FCP600N60Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp600n60z.pdfpdf_icon

FCP600N60Z

isc N-Channel MOSFET Transistor FCP600N60Z FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 6.1. Size:367K  onsemi
fcp600n65s3r0.pdfpdf_icon

FCP600N60Z

MOSFET Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 600 mW, 6 A FCP600N65S3R0 Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor

Другие MOSFET... FDMC89521L , FDMQ86530L , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , IRF1404 , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT .

History: APQ10SN60A

 

 

 

 

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