FDMS037N08B - описание и поиск аналогов

November 2013 FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 m Features Description This N-Channel MOSFET is produced using Fairchild RDS(on) = 3.01 m (Typ.) @ VGS = 10 V, ID = 50 A Semiconductor s advance PowerTrench process that has Low FOM RDS(on)*QG been tailored to minimize the on-state resistance while main- Low Reverse Recovery Charge, Qrr = 80

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January 2015 FDMS0306AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan

November 2013 FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 m Features Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance wh

January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest

August 2010 FDMS0308CS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

October 2014 FDMS0308AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

November 2013 FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 m Features Description RDS(on) = 3.2 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advance PowerTrench process that has been tailored Low FOM RDS(on) *QG to minimize the on-state resistance while maintaining superior Low Reverse Recovery

January 2015 FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 m Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

October 2014 FDMS0300S N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A

October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A

October 2014 FDMS0302S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

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