FDMS8090 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS8090
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.6 ns
Cossⓘ - Выходная емкость: 301 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: MLP5X6
Аналог (замена) для FDMS8090
FDMS8090 Datasheet (PDF)
fdms8090.pdf

April 2013FDMS8090PowerTrench Symmetrical Dual 100 V N-Channel MOSFETFeatures General DescriptionThis device includes two fast switching (Qgd minimized) 100V Max rDS(on) = 13 m at VGS = 10 V, ID = 10 AN-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) Max rDS(on) = 20 m at VGS = 6 V, ID = 8 Apackage. The package is enhanced for exceptional thermal performance.
fdms8090.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8018.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8026s.pdf

August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv
Другие MOSFET... FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , IRFB4110 , FDP030N06BF102 , FDI9406F085 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B .
History: 60N10 | MTP10N40 | FMC20N50E | TK65A10N1 | PK6A4BA | R6012ANJ | RUH4040M2
History: 60N10 | MTP10N40 | FMC20N50E | TK65A10N1 | PK6A4BA | R6012ANJ | RUH4040M2



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