FDMS8333L - описание и поиск аналогов

December 2014 FDMS8333L N-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 m Features General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A ringing of DC/DC converters using either synchronous or Advanced P

December 2014 FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductor s advanced Power Trench process. Advancements in both silicon and Dual CoolTM package Advanced Packa

October 2014 FDMS8320L N-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

November 2014 FDMS8350L N-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A been especially tailored to minimize the on-state resistance and Advanc

FDMS8320L N-Channel PowerTrench MOSFET General Description 40 V, 248 A, 1.1 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)