Справочник MOSFET. FDP023N08B

 

FDP023N08B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP023N08B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 71 ns
   Cossⓘ - Выходная емкость: 1855 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00235 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP023N08B

 

 

FDP023N08B Datasheet (PDF)

 ..1. Size:638K  fairchild semi
 fdp023n08b.pdf

FDP023N08B FDP023N08B

November 2013FDP023N08BN-Channel PowerTrench MOSFET75 V, 242 A, 2.35 mFeatures Description RDS(on) = 1.96 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining Low Reverse Recovery Charge

 ..2. Size:745K  onsemi
 fdp023n08b.pdf

FDP023N08B FDP023N08B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:661K  fairchild semi
 fdp027n08b.pdf

FDP023N08B FDP023N08B

November 2013FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mFeatures Description RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Char

 9.2. Size:595K  fairchild semi
 fdp025n06.pdf

FDP023N08B FDP023N08B

July 2008FDP025N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.5mFeatures General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 9.3. Size:658K  fairchild semi
 fdp020n06b f102.pdf

FDP023N08B FDP023N08B

January 2012FDP020N06B_F102N-Channel PowerTrench MOSFET 60V, 313A, 2mFeatures Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tailored Low FOM RDS(on) *QGto minimize the on-state resistance while maintaining superior switching performance

 9.4. Size:668K  fairchild semi
 fdp020n06b.pdf

FDP023N08B FDP023N08B

November 2013FDP020N06BN-Channel PowerTrench MOSFET60 V, 313 A, 2 mFeatures Description RDS(on) = 1.65 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching performance.

 9.5. Size:870K  onsemi
 fdp027n08b.pdf

FDP023N08B FDP023N08B

FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mDescriptionFeaturesThis N-Channel MOSFET is produced using ON Semicon- RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 Aductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Charge, Qrr = 112 nCs

 9.6. Size:776K  onsemi
 fdp020n06b.pdf

FDP023N08B FDP023N08B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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History: 2SK3376CT

 

 
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