Справочник MOSFET. FCPF400N80Z

 

FCPF400N80Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF400N80Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 43 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 51 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF400N80Z

 

 

FCPF400N80Z Datasheet (PDF)

 ..1. Size:605K  fairchild semi
 fcpf400n80z.pdf

FCPF400N80Z FCPF400N80Z

November 2014FCPF400N80ZN-Channel SuperFET II MOSFET800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400

 ..2. Size:659K  onsemi
 fcpf400n80z.pdf

FCPF400N80Z FCPF400N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:900K  fairchild semi
 fcpf400n80zl1.pdf

FCPF400N80Z FCPF400N80Z

September 2014FCPF400N80ZL1N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

 0.2. Size:746K  onsemi
 fcpf400n80zl1.pdf

FCPF400N80Z FCPF400N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.3. Size:221K  inchange semiconductor
 fcpf400n80zcn.pdf

FCPF400N80Z FCPF400N80Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF400N80ZCNFEATURES Drain-source on-resistance:RDS(on) 0.4@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC Power SupplyLED LightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top