FCPF400N80Z - описание и поиск аналогов

 

FCPF400N80Z. Аналоги и основные параметры

Наименование производителя: FCPF400N80Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 4.5 V

Qg ⓘ - Общий заряд затвора: 43 nC

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 51 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm

Тип корпуса: TO220F

Аналог (замена) для FCPF400N80Z

- подборⓘ MOSFET транзистора по параметрам

 

FCPF400N80Z даташит

 ..1. Size:605K  fairchild semi
fcpf400n80z.pdfpdf_icon

FCPF400N80Z

November 2014 FCPF400N80Z N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400

 ..2. Size:659K  onsemi
fcpf400n80z.pdfpdf_icon

FCPF400N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:900K  fairchild semi
fcpf400n80zl1.pdfpdf_icon

FCPF400N80Z

September 2014 FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

 0.2. Size:746K  onsemi
fcpf400n80zl1.pdfpdf_icon

FCPF400N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , IRLB3034 , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C .

 

 

 


 
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