FDMS86255 - описание и поиск аналогов

 

FDMS86255. Аналоги и основные параметры

Наименование производителя: FDMS86255

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 4 V

Qg ⓘ - Общий заряд затвора: 45 nC

tr ⓘ - Время нарастания: 4.5 ns

Cossⓘ - Выходная емкость: 291 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0124 Ohm

Тип корпуса: PQFN5X6

Аналог (замена) для FDMS86255

- подборⓘ MOSFET транзистора по параметрам

 

FDMS86255 даташит

 ..1. Size:342K  fairchild semi
fdms86255.pdfpdf_icon

FDMS86255

December 2013 FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 1

 ..2. Size:348K  onsemi
fdms86255.pdfpdf_icon

FDMS86255

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:303K  fairchild semi
fdms86255et150.pdfpdf_icon

FDMS86255

January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 63 A, 12.4 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This

 0.2. Size:345K  onsemi
fdms86255et150.pdfpdf_icon

FDMS86255

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , IRFB7545 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 .

 

 

 


 
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