FDMS86255
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS86255
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.7
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 4.5
ns
Cossⓘ - Выходная емкость: 291
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0124
Ohm
Тип корпуса:
PQFN5X6
- подбор MOSFET транзистора по параметрам
FDMS86255
Datasheet (PDF)
..1. Size:342K fairchild semi
fdms86255.pdf 

December 2013FDMS86255N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 1
..2. Size:348K onsemi
fdms86255.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:303K fairchild semi
fdms86255et150.pdf 

January 2015FDMS86255ET150N-Channel Shielded Gate PowerTrench MOSFET150 V, 63 A, 12.4 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This
0.2. Size:345K onsemi
fdms86255et150.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.1. Size:399K 1
fdms86252.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.2. Size:463K 1
fdms86250.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.3. Size:398K 1
fdms86252l.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.4. Size:262K fairchild semi
fdms86252.pdf 

August 2010FDMS86252N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and yet maintain
6.5. Size:354K fairchild semi
fdms86250.pdf 

October 2014FDMS86250N-Channel Shielded Gate PowerTrench MOSFET150 V, 30 A, 25 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 Aincorporates Shielded Gate technology. This process has been optimized for the on-st
6.6. Size:290K fairchild semi
fdms86252l.pdf 

October 2014FDMS86252LN-Channel Shielded Gate PowerTrench MOSFET150 V, 12 A, 56 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 Aincorporates Shielded Gate technology. This process has been optimized for the on
6.7. Size:399K onsemi
fdms86252.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.8. Size:463K onsemi
fdms86250.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.9. Size:398K onsemi
fdms86252l.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... FMP36-015P
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.
History: STW33N60DM2
| MC11N005
| HM8N20KA
| JCS5N50CT
| NCEP026N10F
| NVMFS5C628N
| SI7913DN