Справочник MOSFET. FDMS8670S

 

FDMS8670S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMS8670S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 865 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: PQFN5X6

 Аналог (замена) для FDMS8670S

 

 

FDMS8670S Datasheet (PDF)

 ..1. Size:283K  fairchild semi
 fdms8670s.pdf

FDMS8670S FDMS8670S

October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Adva

 6.1. Size:237K  fairchild semi
 fdms8670.pdf

FDMS8670S FDMS8670S

May 2009FDMS8670tmN-Channel Power Trench MOSFET 30V, 42A, 2.6mFeatures General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18Ahas been especially tailored to minimize on-resistance. This part 100% UIL T

 6.2. Size:239K  fairchild semi
 fdms8670as.pdf

FDMS8670S FDMS8670S

May 2009FDMS8670AStmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.0mFeatures General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18Apackage technologies have been combined to offer the lowest Advance

 7.1. Size:242K  fairchild semi
 fdms8672s.pdf

FDMS8670S FDMS8670S

May 2009FDMS8672SN-Channel PowerTrench SyncFETTM 30V, 35A, 5mFeatures General DescriptionThe FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17Apower conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Packa

 7.2. Size:234K  fairchild semi
 fdms8674.pdf

FDMS8670S FDMS8670S

May 2009FDMS8674tmN-Channel PowerTrench MOSFET 30V, 21A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14Apackage technologies have been combined to offer the lowest Advanced Packa

 7.3. Size:243K  fairchild semi
 fdms8672as.pdf

FDMS8670S FDMS8670S

May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advance

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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