FCP130N60 - описание и поиск аналогов

 

FCP130N60. Аналоги и основные параметры

Наименование производителя: FCP130N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 278 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 65 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm

Тип корпуса: TO220

Аналог (замена) для FCP130N60

- подборⓘ MOSFET транзистора по параметрам

 

FCP130N60 даташит

 ..1. Size:1218K  fairchild semi
fcp130n60.pdfpdf_icon

FCP130N60

September 2014 FCP130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC) and

 ..2. Size:489K  onsemi
fcp130n60.pdfpdf_icon

FCP130N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp130n60.pdfpdf_icon

FCP130N60

isc N-Channel MOSFET Transistor FCP130N60 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdfpdf_icon

FCP130N60

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based

Другие MOSFET... FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 , FCPF650N80Z , FCPF260N65FL1 , FCPF380N65FL1 , IRFB3607 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , FPF1C2P5MF07AM , FCP170N60 , FCPF190N65FL1 , FCU4300N80Z .

History: IRFS4229 | IRFS4310

 

 

 

 

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