FDMA86151L. Аналоги и основные параметры
Наименование производителя: FDMA86151L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.4 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 1.4 ns
Cossⓘ - Выходная емкость: 55 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.088 Ohm
Тип корпуса: MICROFET2X2
Аналог (замена) для FDMA86151L
- подборⓘ MOSFET транзистора по параметрам
FDMA86151L даташит
fdma86151l.pdf
September 2014 FDMA86151L Single N-Channel PowerTrench MOSFET 100 V, 3.3 A, 88 m Features General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 A low rDS(on) and gate charge provide excellent switchin
fdma86108lz.pdf
March 2015 FDMA86108LZ Single N-Channel PowerTrench MOSFET 100 V, 2.2 A, 243 m Features General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 A low rDS(on) and gate charge provide excellent switching
fdma86251.pdf
March 2015 FDMA86251 Single N-Channel PowerTrench MOSFET 150 V, 2.4 A, 175 m Features General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 A low rDS(on) and gate charge provide excellent switching
fdma86265p.pdf
May 2014 FDMA86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m
Другие MOSFET... FDMS8050 , FCH150N65FF155 , FCPF650N80Z , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , CS150N03A8 , FPF1C2P5BF07A , FPF1C2P5MF07AM , FCP170N60 , FCPF190N65FL1 , FCU4300N80Z , FDD9410F085 , FDBL0065N40 , FDBL0090N40 .
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