FDMD8280 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMD8280
Маркировка: 8280
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 31 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 341 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0082 Ohm
Тип корпуса: PQFN3.3X5
FDMD8280 Datasheet (PDF)
fdmd8280.pdf

October 2014FDMD8280Dual N-Channel Power Trench MOSFET 80 V, 40 A, 8.2 mFeatures General Description Max rDS(on) = 8.2 m at VGS = 10 V, ID = 11 AThis device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 m at VGS = 8 V, ID = 9.5 Ainternally connected for half/full bridge, low source inductance Ide
fdmd82100.pdf

June 2014FDMD82100Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 m at VGS = 6 V, ID = 5.5 Ainternally connected for half/full bridge, low source inductance Ideal
fdmd82100l.pdf

June 2014FDMD82100LDual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mFeatures General Description Max rDS(on) = 19.5 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 m at VGS = 4.5 V, ID = 5.7 Ainternally connected for half/full bridge, low source inductance
fdmd8900.pdf

June 2015FDMD8900N-Channel PowerTrench MOSFETQ1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 mFeatures General DescriptionQ1: N-ChannelThis devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 m at VGS = 10 V, ID = 19 Adrain are internally connected providing a low source inductance Max rDS(on) =
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LP4101LT1G | VTI634 | SJMN099R65SW | IPP50R140CP | VS8068AD | AM20P02-60D | IPD65R660CFD
History: LP4101LT1G | VTI634 | SJMN099R65SW | IPP50R140CP | VS8068AD | AM20P02-60D | IPD65R660CFD



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