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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2409SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONThe 2SK2409 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for solenoid, motor, and lamp driver.4.5 0.210.0 0.3FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) 27 m (VGS = 10 V, ID = 20 A)RDS(on) 40 m

2SK2400 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2400 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 17 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhanceme

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS =

Ordering number:ENN5251N-Channel Silicon MOSFET2SK2406Ultrahigh-Speed Switching,Motor Driver ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B High-speed diode.[2SK2406]6.52.35.00.540.850.71.20.60.5 1 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2406]

Ordering number : EN86022SK2403SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2403ApplicationsFeatures Built-in FRD. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 450 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 3 ADrain

2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004AC-A(Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2402 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK2408DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2407 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage 30 V