2SK146. Аналоги и основные параметры
Наименование производителя: 2SK146
Тип транзистора: JFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 33 Ohm
Тип корпуса: TO71
Аналог (замена) для 2SK146
- подборⓘ MOSFET транзистора по параметрам
2SK146 даташит
0.1. Size:121K sanyo
2sk1462.pdf 
Ordering number EN3465 N-Channel Silicon MOSFET 2SK1462 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2056A Converters. [2SK1462] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum Ratings at
0.2. Size:120K sanyo
2sk1465.pdf 
Ordering number EN3468 N-Channel Silicon MOSFET 2SK1465 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2077A Converters. [2SK1465] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25 C Par
0.3. Size:120K sanyo
2sk1463.pdf 
Ordering number EN3466 N-Channel Silicon MOSFET 2SK1463 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2076B Converters. [2SK1463] 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PML Specifications Absolute Maximum Ratings at Ta = 25
0.4. Size:117K sanyo
2sk1460.pdf 
Ordering number EN3463A N-Channel Silicon MOSFET 2SK1460 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SK1460] 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220FI (LS) Specification
0.5. Size:31K sanyo
2sk1460ls.pdf 
Ordering number ENN3463B 2SK1460LS N-Channel Silicon MOSFET 2SK1460LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2078C Micaless package facilitating mounting. [2SK1460LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-
0.6. Size:125K sanyo
2sk1466.pdf 
Ordering number EN3469 N-Channel Silicon MOSFET 2SK1466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2077A Converters. [2SK1466] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25 C Par
0.7. Size:92K sanyo
2sk1468.pdf 
Ordering number EN3769A N-Channel Silicon MOSFET 2SK1468 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1468] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1468] 6.5 2.3 5.0 0.5 4 0.5
0.8. Size:120K sanyo
2sk1464.pdf 
Ordering number EN3467 N-Channel Silicon MOSFET 2SK1464 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2076B Converters. [2SK1464] 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Gate 1 2 3 2 Drain 3 Source SANYO TO-3PML 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 2
0.9. Size:101K sanyo
2sk1467.pdf 
Ordering number EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1467] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Paramet
0.10. Size:119K sanyo
2sk1461.pdf 
Ordering number EN3464 N-Channel Silicon MOSFET 2SK1461 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2056A Converters. [2SK1461] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum Ratings at
0.11. Size:90K sanyo
2sk1469.pdf 
Ordering number EN3770A N-Channel Silicon MOSFET 2SK1469 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1469] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1469] 6.5 2.3 5.0 0.5 4 0.5
0.12. Size:203K inchange semiconductor
2sk1462.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1462 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
0.13. Size:201K inchange semiconductor
2sk1465.pdf 
isc N-Channel MOSFET Transistor 2SK1465 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
0.14. Size:204K inchange semiconductor
2sk1463.pdf 
isc N-Channel MOSFET Transistor 2SK1463 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sole
0.15. Size:197K inchange semiconductor
2sk1460.pdf 
isc N-Channel MOSFET Transistor 2SK1460 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sole
0.16. Size:200K inchange semiconductor
2sk1466.pdf 
isc N-Channel MOSFET Transistor 2SK1466 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =
0.17. Size:203K inchange semiconductor
2sk1464.pdf 
isc N-Channel MOSFET Transistor 2SK1464 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
0.18. Size:203K inchange semiconductor
2sk1461.pdf 
isc N-Channel MOSFET Transistor 2SK1461 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
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, SI2301DS
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.
History: JCS12N60CT
