Справочник MOSFET. 2SK4200LS

 

2SK4200LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK4200LS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.5 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 63 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.73 Ohm
   Тип корпуса: TO220FI

 Аналог (замена) для 2SK4200LS

 

 

2SK4200LS Datasheet (PDF)

 ..1. Size:272K  sanyo
2sk4200ls.pdf

2SK4200LS
2SK4200LS

2SK4200LSOrdering number : ENA1333SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4200LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 ..2. Size:279K  inchange semiconductor
2sk4200ls.pdf

2SK4200LS
2SK4200LS

isc N-Channel MOSFET Transistor 2SK4200LSFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.73(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:272K  1
2sk4204ls.pdf

2SK4200LS
2SK4200LS

2SK4204LSOrdering number : ENA1290SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4204LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

 8.2. Size:273K  1
2sk4203ls.pdf

2SK4200LS
2SK4200LS

2SK4203LSOrdering number : ENA1289SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4203LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

 8.3. Size:208K  toshiba
2sk4207.pdf

2SK4200LS
2SK4200LS

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID

 8.4. Size:496K  sanyo
2sk4209.pdf

2SK4200LS
2SK4200LS

2SK4209Ordering number : ENA1516SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4209ApplicationsFeatures Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitD

 8.5. Size:297K  renesas
2sk4202-s19-ay.pdf

2SK4200LS
2SK4200LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:291K  renesas
2sk4201-s19-ay.pdf

2SK4200LS
2SK4200LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:288K  inchange semiconductor
2sk4201.pdf

2SK4200LS
2SK4200LS

isc N-Channel MOSFET Transistor 2SK4201FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.8. Size:282K  inchange semiconductor
2sk4207.pdf

2SK4200LS
2SK4200LS

iscN-Channel MOSFET Transistor 2SK4207FEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 8.9. Size:279K  inchange semiconductor
2sk4204ls.pdf

2SK4200LS
2SK4200LS

isc N-Channel MOSFET Transistor 2SK4204LSFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.10. Size:280K  inchange semiconductor
2sk4203ls.pdf

2SK4200LS
2SK4200LS

isc N-Channel MOSFET Transistor 2SK4203LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.11. Size:288K  inchange semiconductor
2sk4202.pdf

2SK4200LS
2SK4200LS

isc N-Channel MOSFET Transistor 2SK4202FEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 

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