JCS2N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JCS2N60C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO220C
JCS2N60C Datasheet (PDF)
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf
N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n60.pdf
N lSX:_W:WHe^vfSO{ RN-CHANNEL MOSFET JCS2N60 ;NSpe MAIN CHARACTERISTICS \ Package ID 2.0 A VDSS 600 V Rdson 5 @Vgs=10VQg 15.3 nC APPLICATIONS (u l High frequency switching
jcs2n60mb jcs2n60mfb.pdf
N RN-CHANNEL MOSFETJCS2N60MFB MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS RdsonVgs=10V 5.0 6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs2n60f.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918