Справочник MOSFET. HUF76139P3

 

HUF76139P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HUF76139P3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 165 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для HUF76139P3

 

 

HUF76139P3 Datasheet (PDF)

 6.1. Size:121K  intersil
 huf76139.pdf

HUF76139P3 HUF76139P3

HUF76139P3, HUF76139S3SData Sheet September 1999 File Number 4399.575A, 30V, 0.0075 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075innovative UltraFET process.This advanced process technology Temperature Compensating

 7.1. Size:223K  fairchild semi
 huf76132p3-s3s.pdf

HUF76139P3 HUF76139P3

HUF76132P3, HUF76132S3SData Sheet January 200375A, 30V, 0.011 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelachie

 7.2. Size:263K  fairchild semi
 huf76132sk8.pdf

HUF76139P3 HUF76139P3

HUF76132SK8Data Sheet January 200311.5A, 30V, 0.0115 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 11.5A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Modelsl

 7.3. Size:256K  fairchild semi
 huf76131sk8.pdf

HUF76139P3 HUF76139P3

HUF76131SK8Data Sheet January 200310A, 30V, 0.013 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 10A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowes

 7.4. Size:118K  intersil
 huf76137p3.pdf

HUF76139P3 HUF76139P3

HUF76137P3, HUF76137S3SData Sheet September 1999 File Number 4398.675A, 30V, 0.009 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009innovative UltraFET process.This advanced process technology Temperature Compensating PS

Другие MOSFET... HUF76129P3 , HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , IRFB4110 , HUF76139S3S , HUF76143P3 , HUF76143S3S , HUF76145P3 , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 .

 

 
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