ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2300 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9 A PD Power

BRCS2300MC Rev.A Sep.-2021 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features RDS(ON)SOT23-3 Low RDS(ON),SOT23-3 package,HF Product. / Applications DC-DC Battery management,High spee

BRCS2300MA Rev.B Aug.-2023 DATA SHEET / Descriptions SOT-23 N N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Low R ,SOT-23 package,HF Product. DS(ON) / Applications DC-DC Battery management,High spee

MCS2305BFeatures Load Switch for Portable Devices DC/DC Converter Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1P-Channel Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSMOSFETCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2301 MOSFET(P-Channel) FEATURES renchFET Power MOSFET TMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 VID Drain current -3 A PD Powe

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 10 VID Drain current 2.9

BRCS2301AMA Rev.B Apr.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 packag.Halogen-free Product. / Applications

BRCS2302MA Rev.J May.-2020 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications

BRCS2305MC Rev.B Jan.-2019 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features Trench FET@ Power MOSFET HF Product. / Applications Primarily the display screen drive applications.

BRCS2301EMF Rev.A Aug.-2019 DATA SHEET / Descriptions SOT23-6 P MOS P- CHANNEL MOSFET in a SOT23-6 Plastic Package. / Features R 110m,VGS=-4.5V DS(ON)R 150m,VGS=-2.5V DS(ON)HF Product. / Applications Primarily the display screen drive applications.

BRCS2302AMA Rev.C Apr.-2020 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. Halogen-free Product. / Applicati

BRCS2303MA Rev.A Aug.-2023 DATA SHEET / Descriptions SOT-23 P P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features V =-30V I =-3.2A DS DRDS(ON)@-10V90m(Typ.54m) RDS(ON)@-4.5V110m(Typ.63m) HF Product. / Applications Not

BRCS2301MA Rev.C May.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications

BRCS2305MA Rev. B Jun.-2022 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features MOSFET Trench Power MOSFET technology, Low R ,Low Gate Charge, HF Product. DS(ON) / Applications

CS2308N PD TC=25 1.66 WID VGS=10V,TC=25 2.3 AIDM 10 AVGS 20 V Tjm +150 Tstg -55 +150 RthJC 90 115 /WRthJA 60 75 BVDSS VGS=0V,ID=0.25mA 60 VVGS=10V,ID=5A 0.15RDS on VGS=4.5V,ID=5A 0.20VGS th VDS=VGS,ID=0.25m