SSS2N60B - Даташиты. Аналоги. Основные параметры
Наименование производителя: SSS2N60B
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 23 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 35 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO220F
Аналог (замена) для SSS2N60B
SSS2N60B Datasheet (PDF)
ssp2n60b sss2n60b.pdf

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit
sss2n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
sss2n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrug
sss2n60.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFET SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and
Другие MOSFET... IRFH3205 , SI2306 , VTI630 , VTI630F , VTI634F , VTI640 , VTI640F , SSP2N60B , 20N50 , 2SK4100LS , 2SK1460 , 2SK2010 , 2SK1033 , 2SK1035 , 2SK1036 , 2SK1052 , 2SK1053 .
History: JMSL1010AGQ | IRF8113G | VTI630F
History: JMSL1010AGQ | IRF8113G | VTI630F



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