Справочник MOSFET. 2SK1259

 

2SK1259 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2SK1259
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 2900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TOP-3L
     - подбор MOSFET транзистора по параметрам

 

2SK1259 Datasheet (PDF)

 ..1. Size:37K  panasonic
2sk1259.pdfpdf_icon

2SK1259

Power F-MOS FETs 2SK12592SK1259Silicon N-Channel Power F-MOSUnit : mm 3.3 0.2 Features20.0 0.5 5.0 0.33.0Low ON-resistance RDS(on) : RDS(on)1= 0.012(typ)High-speed switching : tf = 700ns(typ)No secondary breakdownLow-voltage drive1.5 Applications1.52.0 0.3DC-DC converter2.7 0.33.0 0.3Non-contact relay1.0 0.2 0.6 0.2Solenoid drive

 8.1. Size:90K  renesas
2sk1254.pdfpdf_icon

2SK1259

2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

 8.2. Size:103K  renesas
rej03g0917 2sk1254lsds.pdfpdf_icon

2SK1259

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:34K  panasonic
2sk1255.pdfpdf_icon

2SK1259

Power F-MOS FETs 2SK12552SK1255Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)1= 0.135(typ)5.5 0.2 2.7 0.2High-speed switching : tf= 53ns(typ)No secondary breakdown3.1 0.1Low-voltage drive Applications1.3 0.2DC-DC converter1.4 0.1Non-contact relay+0.20.5 -0.1 0.8 0.1Solenoid driveMo

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE60P04Y | LR024N | FQB70N10TMAM002 | NTP2955 | NTTFS5C670NL | SMK0460D | PMN70XPE

 

 
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