2SK1259 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1259
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 2900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TOP-3L
2SK1259 Datasheet (PDF)
2sk1259.pdf
Power F-MOS FETs 2SK12592SK1259Silicon N-Channel Power F-MOSUnit : mm 3.3 0.2 Features20.0 0.5 5.0 0.33.0Low ON-resistance RDS(on) : RDS(on)1= 0.012(typ)High-speed switching : tf = 700ns(typ)No secondary breakdownLow-voltage drive1.5 Applications1.52.0 0.3DC-DC converter2.7 0.33.0 0.3Non-contact relay1.0 0.2 0.6 0.2Solenoid drive
2sk1254.pdf
2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa
rej03g0917 2sk1254lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1255.pdf
Power F-MOS FETs 2SK12552SK1255Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)1= 0.135(typ)5.5 0.2 2.7 0.2High-speed switching : tf= 53ns(typ)No secondary breakdown3.1 0.1Low-voltage drive Applications1.3 0.2DC-DC converter1.4 0.1Non-contact relay+0.20.5 -0.1 0.8 0.1Solenoid driveMo
2sk1254l.pdf
isc N-Channel MOSFET Transistor 2SK1254LFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk1254s.pdf
isc N-Channel MOSFET Transistor 2SK1254SFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918