2SK1421 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1421
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 159 ns
Cossⓘ - Выходная емкость: 1100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: TO220ML
2SK1421 Datasheet (PDF)
2sk1421.pdf
Ordering number:EN3559N-Channel Silicon MOSFET2SK1421Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2063A Converters.[2SK1421] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Sourse2.55 2.55SANYO : T
2sk1420.pdf
Ordering number:EN3558N-Channel Silicon MOSFET2SK1420Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2063A Converters.[2SK1420] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Sourse2.55 2.55SANYO : T
2sk1423.pdf
Ordering number:EN3561N-Channel Silicon MOSFET2SK1423Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2056A Converters.[2SK1423]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO3PBSpecificationsAbsolute Maximum Ratings at Ta
2sk1429.pdf
Ordering number:EN3567N-Channel Silicon MOSFET2SK1429Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1429]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating
2sk1426.pdf
Ordering number:EN3564AN-Channel Silicon MOSFET2SK1426Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2077A Converters.[2SK1426]20.03.35.02.03.40.61.21 : Gate1 2 32 : Drain3 : Source5.45 5.45SANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings at Ta = 25CPa
2sk1427.pdf
Ordering number:EN3565N-Channel Silicon MOSFET2SK1427Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1427]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating
2sk1424.pdf
Ordering number:EN3562N-Channel Silicon MOSFET2SK1424Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2076B Converters.[2SK1424] Micaless package facilitating easy mounting.16.05.63.43.12.82.0 2.01.00.61 : Gate1 2 32 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLS
2sk1425.pdf
Ordering number:EN3563N-Channel Silicon MOSFET2SK1425Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2076B Converters.[2SK1425] Micaless package facilitating easy mounting.16.05.63.43.12.82.0 2.01.00.61 : Gate1 2 32 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLS
2sk1422.pdf
Ordering number:EN3560N-Channel Silicon MOSFET2SK1422Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2056A Converters.[2SK1422]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO3PBSpecificationsAbsolute Maximum Ratings at Ta
2sk1428.pdf
Ordering number:EN3566N-Channel Silicon MOSFET2SK1428Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1428]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating
2sk1420.pdf
2SK1420www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single
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Список транзисторов
Обновления
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