Справочник MOSFET. 2SK2074

 

2SK2074 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2074
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 50 Ohm
   Тип корпуса: SPA

 Аналог (замена) для 2SK2074

 

 

2SK2074 Datasheet (PDF)

 ..1. Size:94K  sanyo
2sk2074.pdf

2SK2074
2SK2074

Ordering number:ENN4499N-Channel Junction Silicon FET2SK2074High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier applications.unit:mm Low-noise amplifier.2034A[2SK2074]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain

 8.1. Size:59K  1
2sk2070.pdf

2SK2074
2SK2074

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2070N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2070 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)7.0 MAX.1.2is a switching element that can be directly driven by the output ofan IC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for driving the ac

 8.2. Size:132K  st
2sk2078 stw9na80.pdf

2SK2074
2SK2074

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

 8.3. Size:218K  toshiba
2sk2078.pdf

2SK2074
2SK2074

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:201K  fuji
2sk2071-01l-s.pdf

2SK2074
2SK2074

N-channel MOS-FET2SK2071-01L,SFAP-IIA Series 600V 6,5 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

 8.5. Size:63K  no
2sk2077.pdf

2SK2074
2SK2074

 8.6. Size:224K  inchange semiconductor
2sk2078.pdf

2SK2074
2SK2074

isc N-Channel MOSFET Transistor 2SK2078DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

 8.7. Size:219K  inchange semiconductor
2sk2077.pdf

2SK2074
2SK2074

isc N-Channel MOSFET Transistor 2SK2077DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

 8.8. Size:201K  inchange semiconductor
2sk2071-01l.pdf

2SK2074
2SK2074

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2071-01LFEATURESHigh speed switchingLow On-ResistanceLow driving powerHigh voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRIPTIONSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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