2SK2126 - описание и поиск аналогов

Power F-MOS FETs 2SK2126 2SK2126 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 100mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 40ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

Ordering number EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features Package Dimensions Ideal for FM tuners in low-voltage radios, car radios, unit mm etc. 2040A Small-sized package permitting 2SK212-applied sets [2SK212] to be made small and slim. 2.2 4.0 Small Crss (Crss=0.04pF typ). High yfs ( yfs =6.0mS typ). 0.4 0.5 0.4

Power F-MOS FETs 2SK2128 2SK2128 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS >15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 20V guaranteed 3.2 0.1 High-speed switching tf= 35ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive

Power F-MOS FETs 2SK2123 2SK2123 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 100mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 35ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

Power F-MOS FETs 2SK2127 2SK2127 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 130mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 60ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

Power F-MOS FETs 2SK2122 2SK2122 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 3.2mJ 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching tf= 50ns 3.2 0.1 No secondary breakdown Applications 2.6 0.1 Non-contact relay 1.2 0.15 1.45 0.15 0.7 0.1 Solenoid drive 0.75 0.1 Motor drive 2.54 0.2 Control equipment 5

Power F-MOS FETs 2SK2129 2SK2129 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 20mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 50ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive

Power F-MOS FETs 2SK2124 2SK2124 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 130mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 60ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor driv

Power F-MOS FETs 2SK2125 2SK2125 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15.6mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 35ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor dri