Power F-MOS FETs 2SK22102SK2210Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

Ordering number:ENN4755N-Channel Junction Silicon FET2SK2219Capacitor Microphone ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK2219-unit:mmapplied sets to be made small and slim.2058A Especially suited for use in audio, telephone capaci-[2SK2219]tor microphones. Excellent voltage characteristic.0.30.15 Excellent transien

Ordering number:ENN5202N-Channel Junction Silicon FET2SK2218High-Frequency Low-Noise AmplifierApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Amateur radio equipment.2125 UHF amplifiers, MIX, OSC, analog switches.[2SK2218] Large | yfs |.4.5 Small Ciss.1.51.60.4 0.53 2 10.41.53.0 1 : Source2 : Gate0.753 : Dra

Silicon MOS FETs (Small Signal) 2SK22112SK2211Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by0.4 0.080.4 0.040.5 0.08magazine packing are available.1.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta

SMD Type MOSFETN-Channel MOSFET2SK22111.70 0.1 Features VDS (V) = 30V ID = 1A0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V)DG1.Gate2.Drain3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1A