2SJ187 - Даташиты. Аналоги. Основные параметры

Ordering number:EN3509AP-Channel Silicon MOSFET2SJ187Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ187]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Ordering number:EN3761AP-Channel Silicon MOSFET2SJ188Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ188]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ188]6.5 2.35.0 0.5

Ordering number:EN3762AP-Channel Silicon MOSFET2SJ189Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ189]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ189]6.5 2.35.0 0.5

2SJ186 Silicon P Channel MOS FET REJ03G0849-0200 (Previous: ADE-208-1184) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )D12

Preliminary Datasheet R07DS0395EJ03002SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Packa

SMD Type MOSFETP-Channel MOSFET2SJ181STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-600V ID =-0.5 A (VGS =-10V)0.127+0.10.80-0.1max RDS(ON) 25 (VGS =-10V)D High speed switchingG Low drive current+ 0.11 Gate2.3 0.60- 0.1+0.152 Drain4 .60 -0.153 Source4 DrainS

SMD Type MOSFETP-Channel MOSFET2SJ185SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-4V)1 2+0.02+0.1 RDS(ON) 20 (VGS =-4V) 0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK13991. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter S

SMD Type MOSFETP-Channel MOSFET2SJ185SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-50V1 2 ID =-0.1 A (VGS =-4V)+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 20 (VGS =-4V) +0.11.9 -0.1 RDS(ON) 40 (VGS =-2.5V) Comp;ementary to 2SK13991. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symb

2SJ182Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo