2SK2575 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2575
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 450 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
Тип корпуса: TO220E
2SK2575 Datasheet (PDF)
2sk2575.pdf
Power F-MOS FETs 2SK25752SK2575(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2574.pdf
Power F-MOS FETs 2SK25742SK2574(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2573.pdf
Power F-MOS FETs 2SK25742SK2573(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2571.pdf
Power F-MOS FETs 2SK25722SK2571(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2572.pdf
Power F-MOS FETs 2SK25722SK2572(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2578.pdf
Power F-MOS FETs 2SK25782SK2578(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
2sk2579.pdf
Power F-MOS FETs 2SK25792SK2579(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
2sk2576.pdf
Power F-MOS FETs 2SK25762SK2576(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.151.45 0.15 0.7 0.1 Applications0.75 0.1Non-contact relay2.54 0.2Solenoid drive5.08 0.
2sk2577.pdf
Power F-MOS FETs 2SK25772SK2577(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2571.pdf
Isc N-Channel MOSFET Transistor 2SK2571FEATURESWith To-3PML packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 450
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918