TransistorsSwitching (200V, 5A)2SK2459NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications1

N-channel MOS-FET2SK2471-01FAP-II Series 300V 0,53 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2499, 2SK2499-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2499 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high current switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-ResistanceRDS(on)1 = 9 m (VGS = 10 V, ID = 25 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2479SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2479 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES 3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on) = 7.5 (VGS = 10 V, ID = 2.0 A) Low Cis

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2412SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2412 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2409SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONThe 2SK2409 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for solenoid, motor, and lamp driver.4.5 0.210.0 0.3FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) 27 m (VGS = 10 V, ID = 20 A)RDS(on) 40 m

2SK2419External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 22 A I 100 A V = 60V, V = 0VD DSS DS GSI 88 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS D

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2477SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2477 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-ResistanceRDS (on) = 1.0 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 950

N-channel MOS-FET2SK2469-01MRFAP-II Series 300V 1 5A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2476SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2476 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 5.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 59

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2480SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2480 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2461SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2461 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 80 m MAX. (@ VGS = 10 V, ID = 10 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2410SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2410 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2498SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONS2SK2498 is N-Channel MOS Field Effect Transistor designed for(in millimeter)high current switching applications.10.00.3 4.50.2FEATURES3.20.22.70.2 Super Low On-State ResistanceRDS (on)1 9 m (VGS = 10 V, ID = 25 A)RDS (on)2

N-channel MOS-FET2SK2494-01F-I Series 60V 0,025 45A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFETF II F II F II F II Hi h p d witchin Av l nch r t d2 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) 1Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts V

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2478SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2478 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 7.5 (VGS = 10 V, ID = 1.0 A) Low Ciss Ciss = 48

N-channel MOS-FET2SK2473-01FAP-II Series 300V 0,2 20A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2462SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SK2462 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS(in millimeters)signed for high current switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A)RDS(on)2

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2413SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2413 is N-Channel MOS Field Effect Transistor de-(in millimeter)signed for high speed switching applications.FEATURES4.5 0.2 Low On-Resistance8.0 0.2RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A)RDS(on)2 = 95 m MAX. (@ VGS =

2SK2400 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2400 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 17 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhanceme

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.42 (typ.) High forward transfer admittance : |Y | = 7.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

2SK2445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2445 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 14 m (typ.) High forward transfer admittance : |Y | = 40 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (

2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2493 Chopper Regulator and DC-DC Converter Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.08 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V = 0.5

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS =

2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Unit: mm Converter and DC-AC High Input Impedance Amplifier Circuit Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1 nA (max) (V = -30 V) GSS GSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-dra

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK2466 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 34 m (typ.) DS (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

Ordering number:ENN5251N-Channel Silicon MOSFET2SK2406Ultrahigh-Speed Switching,Motor Driver ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B High-speed diode.[2SK2406]6.52.35.00.540.850.71.20.60.5 1 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2406]

2SK2442N- Channel Silicon MOS FETVery High-Speed Switching ApplicationsTENTATIVEFeatures and ApplicationsLow ON-state resistance.high-speed switching.4V drive. Absolute Maximum Ratings / Ta=25CunitDrain to Source Voltage VDSS 30 VGate to Source Voltage VGSS 20 VDrain Current (D.C) ID 7 ADrain Current (Pulse) IDP PW10S. dutycycle1% 48 AAllowable

Ordering number : EN86062SK2434SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2434ApplicationsFeatures Low ON-resistance. High-speed switching. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 450 VGate-to-Source Voltage VGSS 30 V

Ordering number:ENN5094N-Channel Silicon MOSFET2SK2440Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SK2440]8 51 : Source2 : Source3 : Source140.2 4 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxi

2SK2433 No. N8353N MOS 2SK2433 , Absolute Maximum Ratings / Ta=25 uni

Ordering number:ENN6475N-Channel Silicon MOSFET2SK2464Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 Enables simplified fabrication, high-density mound-[2SK2464]ing, and miniaturization in end products due to the8.2surface mountable package.7.86.20.631 20.31.0 1.00.62

Ordering number:ENN4984AN-Channel Silicon MOSFET2SK2441Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SK2441]8 51 : Source2 : Source3 : Source140.2 4 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Max

Ordering number : EN86022SK2403SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2403ApplicationsFeatures Built-in FRD. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 450 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 3 ADrain

Ordering number:EN695GN-Channel Junction Silicon FET2SK242Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK242-appliedunit:mmsets to be made small and slim.2024B Small Crss (Crss=0.04pF typ).[2SK242]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpec

2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004AC-A(Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2415, 2SK2415-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2415 is N-Channel MOS Field Effect Transistor designed(in millimeters)for high voltage switching applications.2.3 0.26.5 0.25.0 0.2 0.5 0.1FEATURES4 Low On-ResistanceRDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2485SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2485 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 20

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2484SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2484 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.2 Low On-Resistance10.0RDS(on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ci

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2480SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2480 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2411, 2SK2411-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2411 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high speed switching applications.4.8 MAX.10.6 MAX.3.6 0.21.3 0.2FEATURES10.0 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2482SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2482 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-ResistanceRDS (on) = 4.0 (VGS = 10 V, ID = 3.0 A) 4 Low Ciss Ciss = 900 pF

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2486SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2486 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.0 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 1 830

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2483SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2483 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 2.8 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 1

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2487SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2487 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 2 100

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2481SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2481 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES 3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Cis

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2488SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2488 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES4.7 MAX.15.7 MAX. 3.20.2 Low On-Resistance1.5RDS (on) = 1.2 (VGS = 10 V, ID = 5.0 A)4 Low Ciss Ciss = 2 90

TransistorsSwitching (250V, 5A)2SK2460NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage guaranteed atVGSS = 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications114

TransistorsSmall switching (60V, 2A)2SK2463FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications118Transistors 2SK2463

Power F-MOS FETs 2SK24742SK2474Silicon N-Channel MOSUnit : mmFor high-speed switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1Low ON-resistance RDS(on)High-speed switchingHigh drain-source voltage (VDSS)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : Drai

Power F-MOS FETs 2SK24952SK2495Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.26.0 0.5 1.0 0.1High-speed switchingNo secondary breakdown Applications1.5max. 1.1max.High-speed switching (switching mode regulator)For high-frequency power amplification0.8 0.1 0.5max.2.54 0.35.08 0.5 Absolute Maximu

2SK2424Silicon N Channel MOS FETApplicationTO220CFMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current1 No Secondary Breakdown231 Suitable for Switching regulator, DC DC converter1. Gate2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

2SK2431Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2431Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

2SK2425Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2425Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

2SK1637, 2SK2422Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK1637, 2SK2422Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating

2SK2423Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

2SK2426Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2426Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

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2SK2421External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 40 A I 100 A V = 60V, V = 0VD DSS DS GSI 160 A V 2.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS D

2SK2420External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 30 A I 100 A V = 60V, V = 0VD DSS DS GSI 120 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS

2SK2420External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 30 A I 100 A V = 60V, V = 0VD DSS DS GSI 120 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS

SHINDENGENVZ Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2489Case : STO-220(Unit : mm)( F10S18VZ )180V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION DC/DC converters Power supplies of DC 12-24V input Pr

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2475Case : FTO-220(Unit : mm)(F12F50VX2)500V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverter

2SK2414www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor

2SK2498www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 100 Material categorization:600.008 at VGS = 4.5 V 95TO-220 FULLPAKDGSDGSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Paramete

2SK2462www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

isc N-Channel MOSFET Transistor 2SK2424DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2402 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK2417DESCRIPTIONDrain Current I = 7.5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV

isc N-Channel MOSFET Transistor 2SK2408DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2431DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

isc N-Channel MOSFET Transistor 2SK2420FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2485FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2407 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage 30 V

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2461FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-S

isc N-Channel MOSFET Transistor 2SK2425DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2475DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS

isc N-Channel MOSFET Transistor 2SK2423DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr