Ordering number:ENN6475N-Channel Silicon MOSFET2SK2464Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 Enables simplified fabrication, high-density mound-[2SK2464]ing, and miniaturization in end products due to the8.2surface mountable package.7.86.20.631 20.31.0 1.00.62

N-channel MOS-FET2SK2469-01MRFAP-II Series 300V 1 5A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2461SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2461 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 80 m MAX. (@ VGS = 10 V, ID = 10 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2462SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONThe 2SK2462 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS(in millimeters)signed for high current switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A)RDS(on)2

2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Unit: mm Converter and DC-AC High Input Impedance Amplifier Circuit Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1 nA (max) (V = -30 V) GSS GSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-dra

2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK2466 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 34 m (typ.) DS (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

TransistorsSwitching (250V, 5A)2SK2460NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage guaranteed atVGSS = 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications114

TransistorsSmall switching (60V, 2A)2SK2463FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications118Transistors 2SK2463

2SK2462www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2461FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-S