Power F-MOS FETs 2SK24952SK2495Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.26.0 0.5 1.0 0.1High-speed switchingNo secondary breakdown Applications1.5max. 1.1max.High-speed switching (switching mode regulator)For high-frequency power amplification0.8 0.1 0.5max.2.54 0.35.08 0.5 Absolute Maximu

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2499, 2SK2499-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2499 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high current switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-ResistanceRDS(on)1 = 9 m (VGS = 10 V, ID = 25 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2498SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONS2SK2498 is N-Channel MOS Field Effect Transistor designed for(in millimeter)high current switching applications.10.00.3 4.50.2FEATURES3.20.22.70.2 Super Low On-State ResistanceRDS (on)1 9 m (VGS = 10 V, ID = 25 A)RDS (on)2

N-channel MOS-FET2SK2494-01F-I Series 60V 0,025 45A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2493 Chopper Regulator and DC-DC Converter Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.08 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V = 0.5

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2498www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 100 Material categorization:600.008 at VGS = 4.5 V 95TO-220 FULLPAKDGSDGSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Paramete