2SK1609 - описание и поиск аналогов

Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs

isc N-Channel MOSFET Transistor 2SK1609 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

2sk160

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45

Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs

isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

isc N-Channel MOSFET Transistor 2SK1603 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M

isc N-Channel MOSFET Transistor 2SK1602 DESCRIPTION Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M

isc N-Channel MOSFET Transistor 2SK1600 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

isc N-Channel MOSFET Transistor 2SK1608 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

isc N-Channel MOSFET Transistor 2SK1601 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI