HUF76619D3 - описание и поиск аналогов

HUF76619D3, HUF76619D3S Data Sheet December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.085 , VGS = 10V DRAIN GATE - rDS(ON) = 0.087 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE

HUF76619D3, HUF76619D3S Data Sheet December 2001 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN DRAIN SOURCE (FLANGE) (FLANGE) - rDS(ON) = 0.085 , VGS = 10V DRAIN GATE - rDS(ON) = 0.087 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE

HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance DRAIN DRAIN - rDS(ON) = 0.160 , VGS = 10V SOURCE (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.165 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER

HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect

HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052 , VGS = 10V DRAIN - rDS(ON) = 0.054 , VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect

HUF76633P3_F085 Data Sheet April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB Ultra Low On-Resistance - rDS(ON) = 0.035 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.036 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Model

HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

HUF76645P3, HUF76645S3S Data Sheet December 2001 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.015 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect

HUFA76645S3ST_F085 Data Sheet September 2010 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014 , VGS = 10V - rDS(ON) = 0.015 , VGS = 5V DRAIN Simulation Models (FLANGE) - Temperature Compensated PSPICE and SABER Electrical Models GATE - Spice and SABER Thermal Imped

HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele

HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance DRAIN DRAIN - rDS(ON) = 0.160 , VGS = 10V SOURCE (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.165 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER

HUF76639S3ST_F085 July 2012 50A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-263AB Ultra Low On-Resistance DRAIN - rDS(ON) = 0.026 , VGS = 10V (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com

HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele

HUF76633P3, HUF76633S3S Data Sheet December 2001 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.035 , VGS = 10V DRAIN GATE - rDS(ON) = 0.036 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE El

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUF76629D3ST-F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m D Features Typ rDS(on) = 41m at VGS = 10V, ID = 20A Typ Qg(tot) = 39nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant Qualified to AEC Q101 S Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Pr

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUF76633P3 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C,