Справочник MOSFET. 2SJ266

 

2SJ266 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ266
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: SMP

 Аналог (замена) для 2SJ266

 

 

2SJ266 Datasheet (PDF)

 ..1. Size:107K  sanyo
 2sj266.pdf

2SJ266 2SJ266

Ordering number:EN4236P-Channel Silicon MOSFET2SJ266Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ266] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ266-applied equipment

 9.1. Size:101K  sanyo
 2sj264.pdf

2SJ266 2SJ266

Ordering number:EN4746P-Channel Silicon MOSFET2SJ264Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ264] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

 9.2. Size:106K  sanyo
 2sj265.pdf

2SJ266 2SJ266

Ordering number:EN4235P-Channel Silicon MOSFET2SJ265Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ265] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

 9.3. Size:103K  sanyo
 2sj263.pdf

2SJ266 2SJ266

Ordering number:EN4234P-Channel Silicon MOSFET2SJ263Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ263] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

 9.4. Size:91K  sanyo
 2sj267.pdf

2SJ266 2SJ266

Ordering number:EN4747P-Channel Silicon MOSFET2SJ267Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ267] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ267-applied equipment. High-density

 9.5. Size:100K  sanyo
 2sj268.pdf

2SJ266 2SJ266

Ordering number:EN4237P-Channel Silicon MOSFET2SJ268Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ268] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ268-applied equipment

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