Справочник MOSFET. 2SK1909

 

2SK1909 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK1909

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 70 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 15 V

Максимально допустимый постоянный ток стока (Id): 25 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 300 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm

Тип корпуса: SMP-FD

Аналог (замена) для 2SK1909

 

 

2SK1909 Datasheet (PDF)

1.1. 2sk1909.pdf Size:98K _sanyo

2SK1909 2SK1909

Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1909] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1909-applied equipment.

4.1. 2sk1905.pdf Size:92K _sanyo

2SK1909 2SK1909

Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1905] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-

4.2. 2sk1906.pdf Size:95K _sanyo

2SK1909 2SK1909

Ordering number:EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1906] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 4.3. 2sk1900.pdf Size:99K _sanyo

2SK1909 2SK1909

Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1900] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1900-applied equipment.

4.4. 2sk1904.pdf Size:95K _sanyo

2SK1909 2SK1909

Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1904] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 4.5. 2sk1907.pdf Size:96K _sanyo

2SK1909 2SK1909

Ordering number:EN4226 N-Channel Silicon MOSFET 2SK1907 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1907] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1907-applied equipment.

4.6. 2sk1908.pdf Size:94K _sanyo

2SK1909 2SK1909

Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1908] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1908-applied equipment.

Другие MOSFET... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
Back to Top