Справочник MOSFET. 2SK1961

 

2SK1961 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK1961

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.5 W

Предельно допустимое напряжение сток-исток (Uds): 15 V

Максимально допустимый постоянный ток стока (Id): 0.1 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 24 Ohm

Тип корпуса: TO92

Аналог (замена) для 2SK1961

 

 

2SK1961 Datasheet (PDF)

1.1. 2sk1961.pdf Size:166K _sanyo

2SK1961
2SK1961

Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 Adoption of FBET process. 4.0 4.0 Large | yfs |. Small Ciss. Ultralow noise figure. 0.45 0.5 0.44 0.45 1 : Source 2 : Gate 3 : Drain

4.1. 2sk1969-01.pdf Size:207K _update-mosfet

2SK1961
2SK1961

N-channel MOS-FET 2SK1969-01 FAP-IIIA Series 60V 0,017Ω 50A 125W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics > Equi

4.2. 2sk1968.pdf Size:82K _renesas

2SK1961
2SK1961

2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous: ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Low drive current Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange)

 4.3. 2sk1967.pdf Size:33K _panasonic

2SK1961
2SK1961

Power F-MOS FETs 2SK1967 2SK1967 Silicon N-Channel Power F-MOS Unit : mm Features Low-voltage drive possible 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching : tf =180ns No secondary breakdown Applications 1.5max. 1.1max. Solenoid drive Motor drive 0.8 0.1 0.5max. Control equipment 2.54 0.3 Switching mode regulator 5.08 0.5 1 2 3 1 : Gate Absolute Maximum Rati

4.4. 2sk1968.pdf Size:223K _inchange_semiconductor

2SK1961
2SK1961

isc N-Channel MOSFET Transistor 2SK1968 DESCRIPTION ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V

 4.5. 2sk1969-01.pdf Size:209K _inchange_semiconductor

2SK1961
2SK1961

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1969-01 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Low driving power ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

4.6. 2sk1960.pdf Size:973K _kexin

2SK1961
2SK1961

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET 2SK1960 Features 1.70 0.1 Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±7 Continuous Drai

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