2SK1961 - описание и поиск аналогов

Ordering number ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions High-frequency low-noise amplifier applications. unit mm 2019B Features [2SK1961] 5.0 Adoption of FBET process. 4.0 4.0 Large yfs . Small Ciss. Ultralow noise figure. 0.45 0.5 0.44 0.45 1 Source 2 Gate 3

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not 4.5 0.1 necessary to consider a drive current, this FET is ideal as an 1.6 0.2 1.5 0.1 actuator for low-current portable systems such as headphone st

2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Low drive current Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drai

Power F-MOS FETs 2SK1967 2SK1967 Silicon N-Channel Power F-MOS Unit mm Features Low-voltage drive possible 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 High-speed switching tf =180ns No secondary breakdown Applications 1.5max. 1.1max. Solenoid drive Motor drive 0.8 0.1 0.5max. Control equipment 2.54 0.3 Switching mode regulator 5.08 0.5 1 2 3 1 Gate Absolute Ma

N-channel MOS-FET 2SK1969-01 FAP-IIIA Series 60V 0,017 50A 125W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof - Including G-S Zener-Diode > Applications - Motor Control - General Purpose Power Amplifier - DC-DC Converters > Maximum Ratings and Characteristics > Equi

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET 2SK1960 Features 1.70 0.1 Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 7 Continuous Drai

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1969-01 FEATURES With TO-3PN packaging High speed switching Low driving power Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc N-Channel MOSFET Transistor 2SK1968 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V