Power F-MOS FETs 2SK23392SK2339Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.2Low ON-resistance6.0 0.5 1.0 0.1No secondary breakdownLow-voltage drive Applications1.5max. 1.1max.Non-contact relaySolenoid drive 0.8 0.1 0.5max.Motor drive2.54 0.3Control equipment5.08 0.5Switching mode regulato

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2333Case : FTO-220(Unit : mm)( F6F70HVX2 )700V 6AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 240V inputH

isc N-Channel MOSFET Transistor 2SK2333DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 700 VDSS

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2341SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2341 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 0.26 MAX. (VGS = 10 V, ID =

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.26 (typ.) DS (ON) High forward transfer admittance : |Y | = 8 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhance

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSV) 2SK2376 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vt

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 22 m (typ.) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.5~3.0 V (V = 10 V, I = 1 mA)

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2SK2391 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2391 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 66 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhanceme

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS En

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.17 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

Ordering number:ENN4840N-Channel Junction Silicon FET2SK2395Low-Noise HF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier.unit:mm Low-noise amplifier.2034A[2SK2395]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.03.8nom SANYO : SPAS

Ordering number : EN5415AN-Channel Silicon MOSFET2SK2348High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2348]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number : ENN5412B2SK2378N-channel Silicon MOSFET2SK2378Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2378] Micaless package facilitaing mounting. 4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpeci

Ordering number : EN5315AN-Channel Silicon MOSFET2SK2349High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2349]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number : EN5424AN-Channel Silicon MOSFET2SK2347High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2347]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number : EN5300AN-Channel Silicon MOSFET2SK2316Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit: mm Ultrahigh-speed switching.2062A-PCP Low-voltage drive (2.5V drive).[2SK2316]1 : Gate2 : Drain3 : SourceSANYO: PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition

Ordering number : ENN5374A2SK2379N-Channel Silicon MOSFET2SK2379Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2379]4.5 Micalless package facilitaing mounting.10.02.83.22.41.61.20.70.751 : Gate1 2 32 : Drain2.55 2.553 : SourceSpe

Ordering number:EN4839AN-Channel Junction Silicon FET2SK2394Low-Noise HF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier.unit:mm Low-noise amplifier.2050A[2SK2394]Features0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Small-sized package permitting 2SK2394-appliedsets to be made small slim. Ultralow noise figure

Ordering number:ENN5058N-Channel Silicon MOSFET2SK2317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SK2317]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2317]6.5 2.35.0 0.540.50.85

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2369/2SK2370SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications. 3.0 0.2FEATURES4.7 MAX.15.7 MAX1.5 Low On-Resistance2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 1

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2359/2SK2360SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications. 10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance42SK2359: RDS(o

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2367/2SK2368SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 Low On-Resistance2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2361/2SK2362SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor(in millimeter)designed for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance42SK2361: RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2357/2SK2358SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.4.5 0.210.0 0.33.2 0.2FEATURES2.7 0.2 Low On-Resistance2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID =

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2365/2SK2366SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications.10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance2SK2365: RDS(on)

Power F-MOS FETs 2SK23832SK2383Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

Power F-MOS FETs 2SK23272SK2327Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

Power F-MOS FETs 2SK7582SK2323(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Cont

Power F-MOS FETs 2SK23772SK2377Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingLow ON-resistance3.1 0.1No secondary breakdownLow-voltage drive Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveControl equipmen

Power F-MOS FETs 2SK23402SK2340Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

Power F-MOS FETs 2SK23422SK2342Silicon N-Channel MOSUnit : mmFor motor drive6.5 0.1For DC-DC converter5.3 0.14.35 0.13.0 0.1 FeaturesLow ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakd

Silicon Junction FETs (Small Signal) 2SK23802SK2380Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency1.6 0.15For infrared sensor0.4 0.8 0.1 0.4 Features1 Low gate-source leakage current, IGSS3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are available.

Power F-MOS FETs 2SK23252SK2325Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

Power F-MOS FETs 2SK7582SK2324(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Cont

Power F-MOS FETs 2SK23742SK2374Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

Power F-MOS FETs 2SK23262SK2326Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

Power F-MOS FETs 2SK23752SK2375Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

N-channel MOS-FET2SK2397-01MRFAP-II Series 800V 2,3 5A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

2SK2390Silicon N-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220CFM1D231. Gate G2. Drain 3. SourceS2SK2390Absolute

2SK2329 L , 2SK2329 SSilicon N Channel MOS FETApplicationDPAK-2High speed power switching44Features123 Low onresistance High speed switching 2, 412 Low drive current3 2.5 V gate drive device can be driven from13 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source4. Drain3Table 1 Absolute Maxim

2SK2393Silicon N-Channel MOS FETApplicationHigh voltage / High speed power switchingFeatures Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor ControlOutlineTO-3PLDG1231. Gate2. Drain(Flange)S3. Source2SK2393Absolute Maximum Ratings (Ta = 25

isc N-Channel MOSFET Transistor 2SK2350DESCRIPTIONDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV

isc N-Channel MOSFET Transistor 2SK2398DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor 2SK2352DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2313DESCRIPTIONDrain Current ID=60A@ TC=25Drain Source Voltage-: VDSS=60V(Min)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and motor driv

isc N-Channel MOSFET Transistor 2SK2328DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltag

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION Drain Current ID= 6A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 700V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK2326FEATURES Drain-source on-resistance:RDS(on) 1.5@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V