2SK2339 - описание и поиск аналогов

 ..1. Size:35K  panasonic
 2sk2339.pdf 

Power F-MOS FETs 2SK2339 2SK2339 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 3.4 0.3 8.5 0.2 Low ON-resistance 6.0 0.5 1.0 0.1 No secondary breakdown Low-voltage drive Applications 1.5max. 1.1max. Non-contact relay Solenoid drive 0.8 0.1 0.5max. Motor drive 2.54 0.3 Control equipment 5.08 0.5 Switching mode regulato

 8.1. Size:346K  shindengen
 2sk2333.pdf 

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2333 Case FTO-220 (Unit mm) ( F6F70HVX2 ) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input H

 8.2. Size:213K  inchange semiconductor
 2sk2333.pdf 

isc N-Channel MOSFET Transistor 2SK2333 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 700 V DSS

 9.1. Size:73K  1
 2sk2341.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID =

 9.2. Size:393K  toshiba
 2sk2381.pdf 

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.

 9.3. Size:417K  toshiba
 2sk2350.pdf 

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.26 (typ.) DS (ON) High forward transfer admittance Y = 8 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 200 V) DS Enhance

 9.4. Size:425K  toshiba
 2sk2376.pdf 

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- -MOSV) 2SK2376 Unit mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 13 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vt

 9.5. Size:410K  toshiba
 2sk2398.pdf 

2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2398 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.5 3.0 V (V = 10 V, I = 1 mA)

 9.6. Size:499K  toshiba
 2sk2352.pdf 

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

 9.7. Size:420K  toshiba
 2sk2391.pdf 

2SK2391 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2391 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 66 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhanceme

 9.8. Size:449K  toshiba
 2sk2313.pdf 

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 8 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

 9.9. Size:426K  toshiba
 2sk2314.pdf 

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 66 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

 9.10. Size:288K  toshiba
 2sk2385.pdf 

 9.11. Size:411K  toshiba
 2sk2382.pdf 

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.13 (typ.) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5

 9.12. Size:423K  toshiba
 2sk2311.pdf 

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit mm Regulator Applications 4 V gate drive Low drain-source ON resistance R = 36 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS En

 9.13. Size:390K  toshiba
 2sk2312.pdf 

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 13 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

 9.14. Size:423K  toshiba
 2sk2399.pdf 

2SK2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2399 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.17 (typ.) DS (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 9.15. Size:96K  sanyo
 2sk2395.pdf 

Ordering number ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit mm Low-noise amplifier. 2034A [2SK2395] 2.2 4.0 Features Large yfs . Small Ciss. 0.4 0.5 Ultralow noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 3.8nom SANYO SPA S

 9.16. Size:55K  sanyo
 2sk2348.pdf 

Ordering number EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2348] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 9.17. Size:26K  sanyo
 2sk2378.pdf 

Ordering number ENN5412B 2SK2378 N-channel Silicon MOSFET 2SK2378 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2378] Micaless package facilitaing mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Speci

 9.18. Size:54K  sanyo
 2sk2349.pdf 

Ordering number EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2349] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 9.19. Size:55K  sanyo
 2sk2347.pdf 

Ordering number EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2347] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 9.20. Size:95K  sanyo
 2sk2318.pdf 

 9.21. Size:145K  sanyo
 2sk2316.pdf 

Ordering number EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A-PCP Low-voltage drive (2.5V drive). [2SK2316] 1 Gate 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condition

 9.22. Size:28K  sanyo
 2sk2379.pdf 

Ordering number ENN5374A 2SK2379 N-Channel Silicon MOSFET 2SK2379 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2379] 4.5 Micalless package facilitaing mounting. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 2.55 2.55 3 Source Spe

 9.23. Size:111K  sanyo
 2sk2394.pdf 

Ordering number EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications Package Dimensions AM tuner RF amplifier. unit mm Low-noise amplifier. 2050A [2SK2394] Features 0.4 0.16 Large yfs . 3 Small Ciss. 0 to 0.1 Small-sized package permitting 2SK2394-applied sets to be made small slim. Ultralow noise figure

 9.24. Size:131K  sanyo
 2sk2317.pdf 

Ordering number ENN5058 N-Channel Silicon MOSFET 2SK2317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SK2317] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK2317] 6.5 2.3 5.0 0.5 4 0.5 0.85

 9.25. Size:195K  renesas
 2sk2328.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.26. Size:375K  renesas
 2sk2371 2sk2372.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.27. Size:89K  renesas
 2sk2329.pdf 

2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co

 9.28. Size:102K  renesas
 rej03g1008 2sk2329lsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.29. Size:113K  renesas
 rej03g1010 2sk2393ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.30. Size:77K  renesas
 2sk2315.pdf 

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

 9.31. Size:86K  nec
 2sk2369 2sk2370.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 3.0 0.2 FEATURES 4.7 MAX. 15.7 MAX 1.5 Low On-Resistance 2SK2369 RDS(on) = 0.35 (VGS = 10 V, ID = 1

 9.32. Size:90K  nec
 2sk2359 2sk2360.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 1.3 0.2 10.0 FEATURES Low On-Resistance 4 2SK2359 RDS(o

 9.33. Size:99K  nec
 2sk2367 2sk2368.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 FEATURES 4 Low On-Resistance 2SK2367 RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)

 9.34. Size:85K  nec
 2sk2361 2sk2362.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor (in millimeter) designed for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 2SK2361 RDS (on) = 0.9 (VGS = 10 V, ID = 5.0 A)

 9.35. Size:55K  nec
 2sk2357 2sk2358.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 4.5 0.2 10.0 0.3 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance 2SK2357 RDS(on) = 0.9 (VGS = 10 V, ID =

 9.36. Size:90K  nec
 2sk2365-z 2sk2366-z.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel (in millimeters) MOS Field Effect Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 1.3 0.2 10.0 FEATURES Low On-Resistance 2SK2365 RDS(on)

 9.37. Size:32K  panasonic
 2sk2383.pdf 

Power F-MOS FETs 2SK2383 2SK2383 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

 9.38. Size:32K  panasonic
 2sk2327.pdf 

Power F-MOS FETs 2SK2327 2SK2327 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

 9.39. Size:23K  panasonic
 2sk2323.pdf 

Power F-MOS FETs 2SK758 2SK2323(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Cont

 9.40. Size:31K  panasonic
 2sk2377.pdf 

Power F-MOS FETs 2SK2377 2SK2377 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching Low ON-resistance 3.1 0.1 No secondary breakdown Low-voltage drive Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control equipmen

 9.41. Size:31K  panasonic
 2sk2340.pdf 

Power F-MOS FETs 2SK2340 2SK2340 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

 9.42. Size:24K  panasonic
 2sk2342.pdf 

Power F-MOS FETs 2SK2342 2SK2342 Silicon N-Channel MOS Unit mm For motor drive 6.5 0.1 For DC-DC converter 5.3 0.1 4.35 0.1 3.0 0.1 Features Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakd

 9.43. Size:29K  panasonic
 2sk2380.pdf 

Silicon Junction FETs (Small Signal) 2SK2380 2SK2380 Silicon N-Channel Junction Unit mm For impedance conversion in low frequency 1.6 0.15 For infrared sensor 0.4 0.8 0.1 0.4 Features 1 Low gate-source leakage current, IGSS 3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available.

 9.44. Size:32K  panasonic
 2sk2325.pdf 

Power F-MOS FETs 2SK2325 2SK2325 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

 9.45. Size:23K  panasonic
 2sk2324.pdf 

Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Cont

 9.46. Size:32K  panasonic
 2sk2374.pdf 

Power F-MOS FETs 2SK2374 2SK2374 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

 9.47. Size:32K  panasonic
 2sk2326.pdf 

Power F-MOS FETs 2SK2326 2SK2326 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

 9.48. Size:36K  panasonic
 2sk2375.pdf 

Power F-MOS FETs 2SK2375 2SK2375 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

 9.49. Size:161K  fuji
 2sk2397.pdf 

N-channel MOS-FET 2SK2397-01MR FAP-II Series 800V 2,3 5A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

 9.50. Size:64K  hitachi
 2sk2390.pdf 

2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2390 Absolute

 9.51. Size:32K  hitachi
 2sk2329s-l.pdf 

2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 Low on resistance High speed switching 2, 4 12 Low drive current 3 2.5 V gate drive device can be driven from 1 3 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maxim

 9.52. Size:43K  hitachi
 2sk2393.pdf 

2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2393 Absolute Maximum Ratings (Ta = 25

 9.53. Size:62K  no
 2sk2320.pdf 

 9.54. Size:199K  no
 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf 

 9.55. Size:214K  inchange semiconductor
 2sk2350.pdf 

isc N-Channel MOSFET Transistor 2SK2350 DESCRIPTION Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V

 9.56. Size:221K  inchange semiconductor
 2sk2398.pdf 

isc N-Channel MOSFET Transistor 2SK2398 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.57. Size:214K  inchange semiconductor
 2sk2352.pdf 

isc N-Channel MOSFET Transistor 2SK2352 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 9.58. Size:264K  inchange semiconductor
 2sk2313.pdf 

isc N-Channel MOSFET Transistor 2SK2313 DESCRIPTION Drain Current ID=60A@ TC=25 Drain Source Voltage- VDSS=60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and motor driv

 9.59. Size:217K  inchange semiconductor
 2sk2328.pdf 

isc N-Channel MOSFET Transistor 2SK2328 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltag

 9.60. Size:58K  inchange semiconductor
 2sk2386.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

 9.61. Size:54K  inchange semiconductor
 2sk2388.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)

 9.62. Size:58K  inchange semiconductor
 2sk2351.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION Drain Current ID= 6A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

 9.63. Size:58K  inchange semiconductor
 2sk2389.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 700V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage 30 V

 9.64. Size:271K  inchange semiconductor
 2sk2326.pdf 

isc N-Channel MOSFET Transistor 2SK2326 FEATURES Drain-source on-resistance RDS(on) 1.5 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V