Power F-MOS FETs 2SK23752SK2375Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSV) 2SK2376 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vt

Ordering number : ENN5412B2SK2378N-channel Silicon MOSFET2SK2378Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2378] Micaless package facilitaing mounting. 4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpeci

Ordering number : ENN5374A2SK2379N-Channel Silicon MOSFET2SK2379Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2379]4.5 Micalless package facilitaing mounting.10.02.83.22.41.61.20.70.751 : Gate1 2 32 : Drain2.55 2.553 : SourceSpe

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2369/2SK2370SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications. 3.0 0.2FEATURES4.7 MAX.15.7 MAX1.5 Low On-Resistance2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 1

Power F-MOS FETs 2SK23772SK2377Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingLow ON-resistance3.1 0.1No secondary breakdownLow-voltage drive Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveControl equipmen

Power F-MOS FETs 2SK23742SK2374Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen