Справочник MOSFET. 2SJ563

 

2SJ563 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ563
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.315 Ohm
   Тип корпуса: PCP

 Аналог (замена) для 2SJ563

 

 

2SJ563 Datasheet (PDF)

 ..1. Size:140K  sanyo
 2sj563.pdf

2SJ563 2SJ563

Ordering number:ENN6097AP-Channel Silicon MOSFET2SJ563Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ563]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

 9.1. Size:361K  toshiba
 2sj567.pdf

2SJ563 2SJ563

2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ567 Industrial Applications Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Y | = 2.0 S (typ.) fs Low leakage current: I = -100 A (max) (V =

 9.2. Size:147K  sanyo
 2sj562.pdf

2SJ563 2SJ563

Ordering number:ENN6096AP-Channel Silicon MOSFET2SJ562Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SJ562]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

 9.3. Size:184K  sanyo
 2sj560.pdf

2SJ563 2SJ563

Ordering number:ENN6120AP-Channel Silicon MOSFET2SJ560Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2157 2.5V drive.[2SJ560]4.51.51.60.4 0.53 2 10.41.53.01 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

 9.4. Size:159K  sanyo
 2sj561.pdf

2SJ563 2SJ563

Ordering number:ENN6095AP-Channel Silicon MOSFET2SJ561Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ561]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

 9.5. Size:29K  sanyo
 2sj569ls.pdf

2SJ563 2SJ563

Ordering number : ENN68982SJ569LSP-Channel Silicon MOSFET2SJ569LSUltrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2078B[2SJ569]4.510.02.83.20.91.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 9.6. Size:833K  cn vbsemi
 2sj562.pdf

2SJ563 2SJ563

2SJ562www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL

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