SSF1122D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF1122D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 143 W
Предельно допустимое напряжение сток-исток |Uds|: 110 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 60 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 90 nC
Время нарастания (tr): 15.6 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: DPAK
SSF1122D Datasheet (PDF)
ssf1122d.pdf
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SSF1122D Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device re
ssf1122.pdf
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SSF1122 Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mTyp High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reli
ssf11ns60.pdf
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SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t
ssf1109.pdf
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SSF1109Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.)ID 130AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf11ns65uf.pdf
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SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
ssf11ns60uf.pdf
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SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new
sssf11ns65uf.pdf
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SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
ssf11ns65f.pdf
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SSF11NS65FMain Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh
ssf11ns65.pdf
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SSF11NS65Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which
ssf11ns70uf.pdf
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SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new
ssf11ns65ud.pdf
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SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno
ssf1116a.pdf
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SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf11ns65u.pdf
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SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te
ssf11ns60d.pdf
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SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60D series MOSFETs is a
ssf1116.pdf
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SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param
ssf11ns70ug.pdf
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SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39 (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol
ssf11ns60f.pdf
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SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol
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