Справочник MOSFET. SSF11NS65F

 

SSF11NS65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF11NS65F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 680 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.45 ns
   Cossⓘ - Выходная емкость: 78.06 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для SSF11NS65F

 

 

SSF11NS65F Datasheet (PDF)

 ..1. Size:379K  silikron
 ssf11ns65f.pdf

SSF11NS65F SSF11NS65F

SSF11NS65FMain Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

 5.1. Size:495K  silikron
 ssf11ns65uf.pdf

SSF11NS65F SSF11NS65F

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

 5.2. Size:434K  silikron
 sssf11ns65uf.pdf

SSF11NS65F SSF11NS65F

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

 5.3. Size:373K  silikron
 ssf11ns65.pdf

SSF11NS65F SSF11NS65F

SSF11NS65Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

 5.4. Size:472K  silikron
 ssf11ns65ud.pdf

SSF11NS65F SSF11NS65F

SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno

 5.5. Size:479K  silikron
 ssf11ns65u.pdf

SSF11NS65F SSF11NS65F

SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te

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