SSF13N50F - описание и поиск аналогов

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 ssf13n50f.pdf 

SSF13N50F Main Product Characteristics VDSS 500V RDS(on) 0.41 (typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 6.1. Size:510K  silikron
 ssf13n50.pdf 

SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39 (typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o

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 ssf1331p.pdf 

SSF1331P -1.5A, -30V, RDS(on) 0.112 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323 high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

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 ssf1321p.pdf 

SSF1321P -1.7A, -20V, RDS(on) 0.079 P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323 RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

 9.3. Size:393K  secos
 ssf1320n.pdf 

SSF1320N 2A , 20V , RDS(ON) 58 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation.

 9.4. Size:369K  silikron
 ssf1341.pdf 

SSF1341 D DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -12V,ID = -3.5A RDS(ON)