SSF1502D - аналоги и даташиты транзистора

 

SSF1502D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SSF1502D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 51.5 ns
   Cossⓘ - Выходная емкость: 171 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: DPAK
 

 Аналог (замена) для SSF1502D

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF1502D Datasheet (PDF)

 ..1. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1502D

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:540K  silikron
 ssf1502g5.pdf pdf_icon

SSF1502D

SSF1502G5 Main Product Characteristics: VDSS 150V RDS(on) 0.14(typ) ID 6A Mar ki ng a nd p in Sc he mati c di a gram SOT223 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 8.1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1502D

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.1. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1502D

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSF11NS70UF , SSF11NS70UG , SSF1221J2 , SSF12N60F , SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , IRFP064N , SSF1502G5 , SSF1504D , SSF1526 , SSF1530 , SSF18N50F , SSF18NS60 , SSF18NS60F , SSF1N80D .

History: SSF13N50F | MG120R040

 

 
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