SSF1504D. Аналоги и основные параметры

Наименование производителя: SSF1504D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 24 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 32 ns

Cossⓘ - Выходная емкость: 94 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm

Тип корпуса: DPAK

Аналог (замена) для SSF1504D

- подборⓘ MOSFET транзистора по параметрам

 

SSF1504D даташит

 ..1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1504D

SSF1504D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.3 (typ) ID 6A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.1. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1504D

SSF1502D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.15 (typ) ID 8A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.2. Size:540K  silikron
 ssf1502g5.pdf pdf_icon

SSF1504D

SSF1502G5 Main Product Characteristics VDSS 150V RDS(on) 0.14 (typ) ID 6A Mar ki ng a nd p in Sc he mati c di a gram SOT223 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.1. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1504D

SSF1526 Main Product Characteristics VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SSF1221J2, SSF12N60F, SSF12N65F, SSF1341, SSF13N50, SSF13N50F, SSF1502D, SSF1502G5, IRF730, SSF1526, SSF1530, SSF18N50F, SSF18NS60, SSF18NS60F, SSF1N80D, SSF1N80G5, SSF1N90D