SSF1526. Аналоги и основные параметры

Наименование производителя: SSF1526

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 272 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 65.8 ns

Cossⓘ - Выходная емкость: 334 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm

Тип корпуса: TO220

Аналог (замена) для SSF1526

- подборⓘ MOSFET транзистора по параметрам

 

SSF1526 даташит

 ..1. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1526

SSF1526 Main Product Characteristics VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1526

SSF1504D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.3 (typ) ID 6A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:650K  silikron
 ssf1530.pdf pdf_icon

SSF1526

SSF1530 Main Product Characteristics VDSS 150V RDS(on) 28mohm(typ.) ID 60A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.3. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1526

SSF1502D Main Product Characteristics VDSS 170V(typ) RDS(on) 0.15 (typ) ID 8A Marking and pin DPAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

ПОКАЗАТЬ ЕЩЁ

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