Справочник MOSFET. SSF1526

 

SSF1526 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF1526
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 272 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 65.8 ns
   Cossⓘ - Выходная емкость: 334 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SSF1526

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF1526 Datasheet (PDF)

 ..1. Size:651K  silikron
 ssf1526.pdf pdf_icon

SSF1526

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.1. Size:437K  silikron
 ssf1504d.pdf pdf_icon

SSF1526

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:650K  silikron
 ssf1530.pdf pdf_icon

SSF1526

SSF1530 Main Product Characteristics: VDSS 150V RDS(on) 28mohm(typ.) ID 60A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.3. Size:440K  silikron
 ssf1502d.pdf pdf_icon

SSF1526

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSF12N60F , SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , SSF1502D , SSF1502G5 , SSF1504D , IRFZ44N , SSF1530 , SSF18N50F , SSF18NS60 , SSF18NS60F , SSF1N80D , SSF1N80G5 , SSF1N90D , SSF20N50UH .

History: FQB8P10TM | VBFB1203M

 

 
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