SSF1526 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF1526
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 272 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 65.8 ns
Cossⓘ - Выходная емкость: 334 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
SSF1526 Datasheet (PDF)
ssf1526.pdf

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf1504d.pdf

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1530.pdf

SSF1530 Main Product Characteristics: VDSS 150V RDS(on) 28mohm(typ.) ID 60A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf1502d.pdf

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NTD4960N | SIHG47N60S | PSMN4R1-60YL | 9N95 | IXFT30N50 | PTP20N50A | HGI110N08AL
History: NTD4960N | SIHG47N60S | PSMN4R1-60YL | 9N95 | IXFT30N50 | PTP20N50A | HGI110N08AL



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