Справочник MOSFET. SSF2129H3

 

SSF2129H3 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF2129H3
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15.2 ns
   Cossⓘ - Выходная емкость: 262 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: SOP8
     - подбор MOSFET транзистора по параметрам

 

SSF2129H3 Datasheet (PDF)

 ..1. Size:545K  silikron
 ssf2129h3.pdf pdf_icon

SSF2129H3

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 8.1. Size:542K  silikron
 ssf2122e.pdf pdf_icon

SSF2129H3

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.1. Size:347K  silikron
 ssf2116ej3.pdf pdf_icon

SSF2129H3

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.2. Size:280K  silikron
 ssf2145ch6.pdf pdf_icon

SSF2129H3

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

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History: CS6849 | IXFX30N110P | PNMET20V06E | OSG55R074HSZF | 2SK1501 | DMN90H2D2HCTI | FDC654P

 

 
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