SSF2300 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF2300
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.9 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Максимально допустимый постоянный ток стока |Id|: 2.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: SOT23
SSF2300 Datasheet (PDF)
ssf2300.pdf
SSF2300DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)
ssf2300a.pdf
SSF2300A DDESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)
ssf2300b.pdf
SSF2300B DDESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR
gdssf2300.pdf
GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)
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