SSF2429 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF2429
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 200 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
Тип корпуса: SOT23-6
SSF2429 Datasheet (PDF)
ssf2429.pdf
SSF2429DESCRIPTION The SSF2429 uses advanced trench technology to Dprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GGENERAL FEATURES S VDS = -20V,ID =-5A Schematic diagram RDS(ON)
ssf2418eb.pdf
SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)
ssf2418e.pdf
SSF2418E Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re
ssf2449.pdf
SSF2449DDESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)
ssf2485.pdf
SSF2485D1 D2DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2with gate voltages as low as 2.5V. S1 S2Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)
ssf2437e.pdf
SSF2437E Main Product Characteristics: VDSS -20V RDS(on) 38m (typ.) ID -5.5A Marking and pin SOT-23-6 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf2418b.pdf
SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)
ssf2439e.pdf
SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-4.5A Schematic Diagram RDS(ON)
ssf2418ebk.pdf
SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)
ssf2418e.pdf
SSF2418Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23
Другие MOSFET... SSF2314 , SSF2316E , SSF2318E , SSF2336 , SSF2341E , SSF2356G8 , SSF2418E , SSF2418EB , 4435 , SSF2437E , SSF2449 , SSF2485 , SSF2610E , SSF2616E , SSF2627 , SSF2637E , SSF2649 .
